吴静远

2019-11-07

基本信息姓名吴静远
系别光电科学与工程系
职称讲师
联系方式见学院黄页
电子邮件jywu@dhu.edu.cn
研究方向二维材料与器件、光电探测器
个人简介淡泊以明志,宁静以致远。
学习经历起止年月学校专业学位/学历
2015/09-2017/01英国剑桥大学物理电子学博士联合培养
2012/09-2019/09东南大学物理电子学博士(硕博连读)
2008/09-2012/07齐鲁工业大学光信息科学与技术学士
工作经历起止年月单位职称/职务
2019/10-至今东华大学讲师
代表性论文&科研
1. J. Y. Wu, Y. T. Chun, S. Li, T. Zhang, J. Wang, P. K. Shrestha and D. Chu, Broadband MoS2 Field-Effect Phototransistor: Ultra-high Visible-light Photoresponsivity and Negative Infrared Photoresponse, Advanced Materials, 2018, 30, 1705880.
2. J. Y. Wu, Y. T. Chun, S. Li, T. Zhang and D. Chu, Electrical Rectifying and Photosensing Property of MoS2 Based Schottky Diode, ACS Applied Materials & Interfaces, 2018, 10(29), 24613-24619.
3. J. Y. Wu, X. Y. Zhang, X. D. Ma, Y. P. Qiu and T. Zhang, High Quantum-Yield Luminescent MoS2 Quantum Dots with Variable Light Emission Created via Direct Ultrasonic Exfoliation of MoS2 Nanosheets, RSC Advances, 2015, 5, 95178-95182.
4. J. Y. Wu, M. N. Lin, L. D. Wang and T. Zhang, Photoluminescene of MoS2 Prepared by Effective Grinding-Assisted Sonication Exfoliation, Journal of Nanomaterials, 2014, 852735, 1-6.
5. J. Y. Wu, F. Li, M. Xiong, T. Zhang and X. Y. Zhang, High-Photoresponsivity MoS2/CdSe Quantum Dots Hybrid Phototransistor with Enhanced Photoresponse Speed, 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 2018: 1-4.
代表性专利&其他
1. 张彤,吴静远,何伟迪,苏丹,张晓阳,中空表面等离激元结构/二维材料复合多色红外探测芯片,申请中国发明专利,申请号:201910631985.0。
2. 张彤,苏丹,张晓阳,吴静远,王善江,一种超宽带吸收的异质结太阳能电池,授权中国发明专利,授权公告号:CN106784334B。
3. 张彤,徐佳佳,张晓阳,吴静远,单锋,马小丹,陈逾璋,一种柔性导电线路室温焊接方法,授权中国发明专利,授权公告号:CN106102333B。